Details

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BUY SIC632CD-T1-GE3 https://www.utsource.net/itm/p/12402843.html

Parameter	Description
Part Number	SIC632CD-T1-GE3
Type	Silicon Carbide (SiC) MOSFET
Configuration	N-channel
Voltage Rating (VDS)	1200 V
Current Rating (ID)	4 A
Power Dissipation	15.7 W
RDS(on) @ 25°C	80 mΩ
Gate Charge (QG)	130 nC
Switching Frequency	Optimized for high-frequency switching applications
Package Type	TO-247-3L
Operating Temperature	-55°C to +175°C
Mounting Type	Through-hole

Instructions:

1. Installation: Ensure that the device is mounted in a way that provides adequate heat dissipation, especially considering its operating temperature range.
2. Handling: Handle with care to avoid damage to the leads and body of the MOSFET. Use appropriate anti-static precautions.
3. Testing: Before installing into the final circuit, test the device parameters using a compatible MOSFET tester.
4. Application: This SiC MOSFET is suitable for high-efficiency power conversion applications such as solar inverters, motor drives, and DC-DC converters.
5. Storage: Store in a dry, cool place away from direct sunlight and moisture to prevent degradation.
6. Safety: Always ensure that the maximum voltage and current ratings are not exceeded to avoid damaging the component or causing safety hazards.

(For reference only)