Details

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BUY VS-GB75YF120N https://www.utsource.net/itm/p/12403190.html

Parameter	Description
Part Number	VS-GB75YF120N
Type	Power MOSFET
Package Type	TO-247
Drain Source Voltage	VDS = 75V
Continuous Drain Current	ID = 120A (at Tc = 25°C)
Pulsed Drain Current	IDM = 360A (t = 10μs, duty cycle = 1%)
RDS(on)	2.8mΩ (at VGS = 10V, ID = 120A)
Gate Threshold Voltage	VGS(th) = 2.0V to 4.0V
Input Capacitance	Ciss = 5290pF
Output Capacitance	Coss = 1040pF
Reverse Transfer Capacitance	Crss = 970pF
Total Gate Charge	Qg = 118nC
Gate ESR	Rg = 1.2Ω
Thermal Resistance Junction to Case	Rth(j-c) = 0.22°C/W
Operating Temperature Range	-55°C to +175°C

Instructions:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking for the TO-247 package to maintain optimal operating temperatures, especially under high current conditions.
3. Biasing: Apply gate voltage within specified limits to avoid damage. Use a gate resistor to control switching speed and reduce noise.
4. Storage: Store in a dry, cool place away from direct sunlight and corrosive materials.
5. Soldering: Follow manufacturer guidelines for soldering temperature and time to prevent thermal damage.
6. Testing: Before installation, verify all parameters using calibrated test equipment to ensure compliance with specifications.

(For reference only)