IR2110

IR2110


Specifications
SKU
12403658
Details

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Parameter Symbol Min Typical Max Unit Notes
Supply Voltage (High Side) VB 10 - 20 V High-side supply voltage
Supply Voltage (Low Side) VSS 0 - 18 V Low-side supply voltage
Logic Input Voltage (High) VIH 2 - 20 V Logic input high voltage
Logic Input Voltage (Low) VIL 0 - 0.8 V Logic input low voltage
Output Current (Source) IOH - 1.5 - A Output current when sourcing
Output Current (Sink) IOL - 1.5 - A Output current when sinking
Gate Drive Voltage VGS 4 - 20 V Gate drive output voltage
Gate Drive Resistance RDS(on) - 1.5 - Ω On-state resistance of the gate driver
Propagation Delay Time td 35 50 75 ns Propagation delay time
Rise Time tr 15 25 40 ns Rise time of the output signal
Fall Time tf 15 25 40 ns Fall time of the output signal
Operating Temperature Range TA -40 - 125 °C Ambient operating temperature range
Storage Temperature Range TSTG -65 - 150 °C Storage temperature range

Instructions for Using IR2110:

  1. Power Supply:

    • Connect the high-side supply voltage (VB) to the appropriate pin.
    • Connect the low-side supply voltage (VSS) to the appropriate pin.
    • Ensure that the supply voltages are within the specified ranges.
  2. Logic Inputs:

    • Apply logic high (VIH) or logic low (VIL) signals to the input pins.
    • Use appropriate logic levels to avoid misoperation.
  3. Gate Drive:

    • The IR2110 can drive both high-side and low-side MOSFETs or IGBTs.
    • Ensure that the gate drive voltage (VGS) is within the specified range to prevent damage to the MOSFETs or IGBTs.
  4. Output Current:

    • The driver can source and sink up to 1.5A. Ensure that the load does not exceed this limit.
  5. Timing Parameters:

    • Consider the propagation delay time (td), rise time (tr), and fall time (tf) when designing your circuit to ensure proper timing.
  6. Temperature:

    • Operate the device within the specified ambient temperature range (TA) to ensure reliable performance.
    • Store the device within the specified storage temperature range (TSTG) to avoid damage.
  7. Protection:

    • Implement appropriate protection circuits, such as overvoltage and overcurrent protection, to safeguard the IR2110 and connected components.
  8. Layout Considerations:

    • Use short and direct traces for power and ground connections to minimize parasitic inductance and improve performance.
    • Place decoupling capacitors close to the power pins to filter out noise and provide stable operation.

By following these instructions, you can ensure optimal performance and reliability of the IR2110 in your application.

(For reference only)

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