Details

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BUY IXTK62N25 https://www.utsource.net/itm/p/12403687.html

Below is the parameter table and instructions for the IXTK62N25 MOSFET.

IXTK62N25 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	VDS	-	-	250	V
Gate-Source Voltage	VGS	-15	-	15	V
Continuous Drain Current	ID	-	-	62	A	TC = 25°C
Pulsed Drain Current	IDpeak	-	-	186	A	tp = 10ms, TC = 25°C
Total Power Dissipation	PTOT	-	-	330	W	TC = 25°C
Thermal Resistance (Junction to Case)	RθJC	-	0.7	-	°C/W
Thermal Resistance (Junction to Ambient)	RθJA	-	40	-	°C/W
Input Capacitance	Ciss	-	1800	-	pF	VDS = 25V, f = 1MHz
Output Capacitance	Coss	-	450	-	pF	VDS = 25V, f = 1MHz
Gate Charge	QG	-	120	-	nC	VGS = 15V, ID = 62A
Threshold Gate Voltage	VGS(th)	2.5	3.5	4.5	V	ID = 1mA, TA = 25°C
On-State Resistance	RDS(on)	-	0.038	-	Ω	VGS = 10V, ID = 62A
Reverse Transfer Capacitance	Crss	-	220	-	pF	VDS = 25V, f = 1MHz

Instructions for IXTK62N25

1. Handling Precautions:

   • ESD Sensitivity: The IXTK62N25 is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
   • Storage: Store the device in a dry, cool place away from direct sunlight and moisture.

2. Mounting:

   • Heatsinking: Ensure adequate heatsinking to maintain the junction temperature within safe limits. Use thermal paste to enhance heat transfer between the device and the heatsink.
   • Torque Specifications: Follow the recommended torque specifications for screw terminals to avoid damage to the device.

3. Operating Conditions:

   • Voltage Limits: Do not exceed the maximum drain-source voltage (V_DS) of 250V or the gate-source voltage (V_GS) of ±15V.
   • Current Limits: Ensure that the continuous drain current (I_D) does not exceed 62A at a case temperature of 25°C. For pulsed applications, do not exceed 186A for a pulse duration of 10ms.

4. Thermal Management:

   • Thermal Resistance: The thermal resistance from the junction to the case (R_θJC) is 0.7°C/W. Ensure that the heatsink can dissipate the power generated by the device to keep the junction temperature below the maximum rating.
   • Ambient Temperature: The thermal resistance from the junction to ambient (R_θJA) is 40°C/W. Monitor the ambient temperature and ensure it remains within the operating range.

5. Testing and Troubleshooting:

   • Initial Testing: Before connecting the device to a circuit, perform initial tests to verify its functionality. Measure the gate-source and drain-source voltages with a multimeter.
   • Troubleshooting: If the device fails, check for overvoltage, overcurrent, or overheating conditions. Replace any damaged components and ensure the circuit is properly designed and protected.

6. Application Notes:

   • Gate Drive: Use a gate driver with sufficient current capability to charge and discharge the gate capacitance quickly. This helps in reducing switching losses.
   • Snubber Circuits: Consider using snubber circuits to protect the device from voltage spikes during switching operations.

By following these parameters and instructions, you can ensure reliable and efficient operation of the IXTK62N25 MOSFET in your application.

(For reference only)