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Below is the parameter table and instructions for the BSM50GD120DN2 MOSFET.
BSM50GD120DN2 Parameter Table
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | - | 1200 | V | - |
Gate-Source Voltage | VGS | -15 | - | 20 | V | - |
Continuous Drain Current | ID | - | 50 | - | A | TC = 25°C |
Pulsed Drain Current | ID(p) | - | 100 | - | A | tp = 10 μs, IG = 10 A |
Gate Charge | QG | - | 340 | - | nC | VGS = 15 V, ID = 50 A |
Input Capacitance | Ciss | - | 2400 | - | pF | VDS = 600 V, f = 1 MHz |
Output Capacitance | Coss | - | 170 | - | pF | VDS = 600 V, f = 1 MHz |
Rise Time | tr | - | 80 | - | ns | VDS = 600 V, ID = 50 A, RG = 10 Ω |
Fall Time | tf | - | 70 | - | ns | VDS = 600 V, ID = 50 A, RG = 10 Ω |
Thermal Resistance (Junction to Case) | RθJC | - | 0.5 | - | K/W | - |
Thermal Resistance (Junction to Ambient) | RθJA | - | 40 | - | K/W | - |
Maximum Junction Temperature | TJ(max) | - | - | 175 | °C | - |
Instructions for Use
Mounting and Handling:
- Ensure proper handling to avoid static damage.
- Use appropriate mounting techniques to ensure good thermal contact with the heatsink.
Biasing and Drive:
- Apply gate-source voltage (VGS) within the specified range (-15 V to +20 V).
- Use a gate resistor (RG) to control switching speed and reduce ringing.
Operating Conditions:
- Ensure the drain-source voltage (VDS) does not exceed 1200 V.
- Keep the continuous drain current (ID) below 50 A at 25°C case temperature.
- For pulsed operation, do not exceed 100 A for pulse durations up to 10 μs.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 175°C.
- Use a heatsink with adequate thermal resistance (RθJC and RθJA) to dissipate heat effectively.
Storage and Packaging:
- Store in a dry, cool place to prevent moisture damage.
- Follow ESD (Electrostatic Discharge) precautions during storage and handling.
Testing and Troubleshooting:
- Use a high-voltage tester to verify insulation integrity.
- Check for proper biasing and drive signals using an oscilloscope.
By following these parameters and instructions, you can ensure reliable and efficient operation of the BSM50GD120DN2 MOSFET.
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