2N4929

2N4929

Category: Transistors

Specifications
Details

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Parameter Value Unit
Type N-channel Junction FET -
Drain-Source Voltage 200 V
Gate-Source Voltage ±20 V
Drain Current 150 mA
Power Dissipation 375 mW
Input Capacitance 16 pF
Package Type TO-92 -

Instructions for Use:

  1. Handling Precautions: The 2N4929 is sensitive to static electricity. Use proper ESD protection when handling.
  2. Mounting: Ensure correct orientation during mounting to avoid damage. Refer to the pin configuration diagram in the datasheet.
  3. Operating Conditions: Operate within specified voltage and current limits to prevent device failure.
  4. Heat Management: Although the TO-92 package dissipates heat, ensure adequate ventilation or cooling if operating near maximum power dissipation.
  5. Storage: Store in a dry environment away from direct sunlight and sources of heat.
  6. Testing: Before final assembly, test the device using recommended test circuits to ensure functionality.
(For reference only)

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