MMSZ5247B

MMSZ5247B

Category: Transistors

Specifications
SKU
12404616
Details

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Parameter Symbol Min Typ Max Unit
Reverse Breakdown Voltage VR(BR) - 180 200 V
Maximum Reverse Current IR - 5 - 渭A
Forward Voltage (at 1mA) VF(1mA) 1.3 - 1.6 V
Operating Junction Temperature TJ -40 - 150 掳C
Storage Temperature Range TS -65 - 150 掳C
Power Dissipation PT - - 200 mW

Instructions for Using MMSZ5247B

  1. Handling Precautions:

    • Handle with care to avoid damage to the device.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the device is mounted correctly on the PCB (Printed Circuit Board).
    • Follow the recommended soldering profile to avoid thermal stress.
  3. Operating Conditions:

    • Do not exceed the maximum reverse breakdown voltage (VR(BR)) of 200V.
    • Ensure the operating junction temperature (TJ) stays within the range of -40掳C to 150掳C.
    • Keep the power dissipation (PT) below 200mW to prevent overheating.
  4. Storage:

    • Store the device in a dry, cool place within the temperature range of -65掳C to 150掳C.
    • Avoid exposure to high humidity and corrosive environments.
  5. Testing:

    • Use a multimeter or a dedicated testing device to verify the forward voltage (VF(1mA)) at 1mA current.
    • Check the reverse current (IR) to ensure it does not exceed 5渭A.
  6. Applications:

    • Suitable for use in voltage regulation, overvoltage protection, and reference voltage circuits.
    • Can be used in consumer electronics, automotive, and industrial applications.
  7. Schematic and Layout:

    • Refer to the datasheet for recommended schematic and PCB layout guidelines to ensure optimal performance and reliability.
(For reference only)

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