Details

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BUY FA3641N-H1-TE1 https://www.utsource.net/itm/p/12404702.html

Parameter	Value	Unit
Type	MOSFET	-
Package	TO-252 (DPAK)	-
Drain-Source Voltage	60	V
Gate-Source Voltage	卤20	V
Continuous Drain Current	11.5	A
Power Dissipation	1.7	W
RDS(on) (VGS=10V)	12.5	m惟
Junction Temperature	-40 to +150	掳C
Storage Temperature	-55 to +150	掳C

Instructions:

1. Handling:

   • Handle with care to avoid damage to the leads and body.
   • Use appropriate ESD protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper alignment of the component during soldering.
   • Use a temperature-controlled soldering iron to avoid overheating.
   • Follow the recommended soldering profile for the TO-252 package.

3. Operation:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure adequate heat dissipation if operating at high current or power levels.
   • Check the gate-source voltage to ensure it is within the specified range to prevent damage to the MOSFET.

4. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep away from direct sunlight and sources of heat.

5. Testing:

   • Use a multimeter or an appropriate test instrument to verify the functionality of the MOSFET.
   • Test the drain-source resistance (R_DS(on)) to ensure it is within the specified range.

(For reference only)