Details

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BUY M27C256B-15C1 https://www.utsource.net/itm/p/12420136.html

Parameter	Description	Value
Device Type	EPROM (Erasable Programmable Read-Only Memory)	M27C256B-15C1
Memory Capacity	Total number of bits	256 Kbits
Organization	Number of address lines and data lines	18 x 8
Supply Voltage (Vcc)	Operating voltage range	4.5V to 5.5V
Access Time	Maximum time from valid address to valid data output	150 ns
Programming Voltage	Voltage required for programming	12.5V ± 0.5V
Erase Time	Time required for UV erasure	15 to 30 minutes
Data Retention	Minimum guaranteed data retention period	10 years
Operating Temperature	Range of temperatures for normal operation	-40°C to +85°C
Storage Temperature	Range of temperatures for storage	-65°C to +150°C
Package Type	Type of package	28-pin PDIP, 28-pin SOIC
Pin Configuration	Description of pin functions	See Pin Configuration

Pin Configuration

Pin Number	Pin Name	Description
1	A17	Address Line 17
2	A16	Address Line 16
3	A15	Address Line 15
4	A14	Address Line 14
5	A13	Address Line 13
6	A12	Address Line 12
7	A11	Address Line 11
8	GND	Ground
9	A10	Address Line 10
10	A9	Address Line 9
11	A8	Address Line 8
12	A7	Address Line 7
13	A6	Address Line 6
14	A5	Address Line 5
15	A4	Address Line 4
16	A3	Address Line 3
17	A2	Address Line 2
18	A1	Address Line 1
19	A0	Address Line 0
20	OE	Output Enable (Active Low)
21	Vpp	Programming Voltage Input
22	Vcc	Supply Voltage
23	D7	Data Line 7
24	D6	Data Line 6
25	D5	Data Line 5
26	D4	Data Line 4
27	D3	Data Line 3
28	D2	Data Line 2
29	D1	Data Line 1
30	D0	Data Line 0
31	NC	No Connect
32	NC	No Connect

Instructions

1. Power Supply:

   • Connect Vcc to the supply voltage (4.5V to 5.5V).
   • Connect GND to ground.

2. Addressing:

   • Apply the desired address to the address lines (A0 to A17).

3. Output Enable:

   • Set OE low to enable data output.
   • Set OE high to disable data output.

4. Programming:

   • Apply 12.5V ± 0.5V to Vpp during programming.
   • Apply the programming data to the data lines (D0 to D7).
   • Follow the specific programming algorithm provided by the manufacturer.

5. Erasing:

   • Expose the device to UV light for 15 to 30 minutes to erase the memory.

6. Handling:

   • Handle the device with care to avoid static discharge.
   • Store the device in a dry environment to prevent moisture damage.

For detailed programming algorithms and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)