Details

---

BUY SKIIP13NAB065V1 https://www.utsource.net/itm/p/12426387.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	650	V	Maximum voltage between collector and emitter with the gate open.
Gate-Emitter Voltage	VGE	-15	-	20	V	Maximum voltage between gate and emitter.
Continuous Collector Current	IC	-	-	1300	A	Maximum continuous current through the collector.
Pulse Collector Current	IC(rms)	-	-	1800	A	Maximum pulse current through the collector (pulse width ≤ 10 μs).
Power Dissipation	PTOT	-	-	2000	W	Maximum total power dissipation at TC = 25°C.
Junction Temperature	TJ	-40	-	175	°C	Operating junction temperature range.
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range.
Thermal Resistance, Junction to Case	RthJC	-	0.15	-	K/W	Thermal resistance from junction to case.
Turn-On Time	ton	-	1.2	1.8	μs	Time for the transistor to turn on.
Turn-Off Time	toff	-	1.0	1.5	μs	Time for the transistor to turn off.
Gate Charge	QG	-	120	150	nC	Total gate charge required to switch the transistor.

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within the specified range.
   • Use a thermally conductive paste or pad between the device and the heatsink to improve heat transfer.

2. Gate Drive:

   • Apply a gate-emitter voltage (V_GE) within the specified range to ensure reliable switching.
   • Use a gate resistor to control the rise and fall times of the gate signal, which helps in reducing switching losses and electromagnetic interference (EMI).

3. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage due to excessive collector current.
   • Monitor the collector current and use a fast-acting fuse or current limiter if necessary.

4. Thermal Management:

   • Regularly monitor the temperature of the heatsink and the device to ensure it stays within the operating temperature range.
   • Consider forced air cooling or liquid cooling for high-power applications.

5. Storage and Handling:

   • Store the device in a dry environment within the specified storage temperature range.
   • Handle the device with care to avoid mechanical stress and static electricity, which can damage the sensitive components.

6. Testing:

   • Before installing the device in a circuit, test its parameters using a suitable test setup to ensure it meets the specifications.
   • Verify the functionality by measuring the collector-emitter voltage and current under different operating conditions.

By following these instructions, you can ensure optimal performance and longevity of the SKIIP13NAB065V1 transistor.

(For reference only)