Details

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BUY 2SA1738 https://www.utsource.net/itm/p/12442447.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	Vceo	Ic = 0	-	-	60	V
Collector-Base Voltage	Vcbo	Ib = 0	-	-	70	V
Emitter-Base Voltage	Vebo	Ie = 5mA	-	-	6.0	V
Collector Current	Ic	Vce = 25V	-	10	-	A
Base Current	Ib	Vce = 25V, Ic = 1A	-	0.1	-	A
DC Current Gain	hFE	Ic = 1A	30	100	400	-
Transition Frequency	fT	Ic = 150mA	-	-	10	MHz
Power Dissipation	Ptot	Ta = 25°C	-	-	90	W
Junction Temperature	Tj		-55	-	150	°C
Storage Temperature	Tstg		-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Handle the transistor carefully to avoid damage.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Biasing and Operation:

   • Operate within specified voltage and current limits to prevent damage.
   • For optimal performance, bias the base current according to the required collector current and desired gain.

3. Thermal Considerations:

   • Monitor junction temperature to ensure it remains within operational limits.
   • Use appropriate cooling methods (heat sinks, fans) if necessary.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.

5. Testing:

   • When testing, apply voltages and currents gradually to avoid exceeding ratings.
   • Use protective equipment and follow safety guidelines when handling electrical components.

6. Applications:

   • Suitable for general-purpose amplification and switching applications.
   • Ideal for circuits requiring high gain and moderate power handling.

(For reference only)