Details

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BUY M48Z32-100PC1 https://www.utsource.net/itm/p/12442882.html

Parameter	Description	Value
Part Number	Product Identifier	M48Z32-100PC1
Type	Memory Type	SRAM
Capacity	Storage Capacity	32 Kbits
Organization	Memory Organization	4K x 8
Vcc (Supply Voltage)	Operating Voltage Range	2.0V to 5.5V
Icc (Current)	Active Current	3 mA (Typical)
Access Time	Read/Write Access Time	100 ns (Maximum)
Package	Package Type	SOIC-8
Operating Temperature	Temperature Range	-40°C to +85°C
Endurance	Write Cycles	Unlimited
Retention	Data Retention	20 years at 25°C
RoHS Compliance	Environmental Standard Compliance	Yes

Instructions:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.0V to 5.5V.
   • Connect Vcc to the positive power supply and GND to the ground.

2. Signal Connections:

   • A0-A11: Address lines for selecting the memory location.
   • D0-D7: Data lines for reading from or writing to the memory.
   • OE (Output Enable): Active low signal to enable data output.
   • WE (Write Enable): Active low signal to enable data write.
   • CE (Chip Enable): Active low signal to enable the chip.

3. Operation:

   • To read data:
     • Set CE and OE to low.
     • Apply the desired address on A0-A11.
     • Data will appear on D0-D7 after the access time.
   • To write data:
     • Set CE and WE to low.
     • Apply the desired address on A0-A11.
     • Apply the data to be written on D0-D7.
     • Data will be written after the access time.

4. Storage and Handling:

   • Store the device in a dry, cool place to avoid moisture damage.
   • Handle with care to prevent static discharge which can damage the device.

5. Environmental Considerations:

   • The device is RoHS compliant, ensuring it meets environmental standards for hazardous substances.

(For reference only)