Details
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Parameter | Symbol | Min | Typical | Max | Unit | Notes |
---|---|---|---|---|---|---|
Supply Voltage | Vcc | 2.7 | - | 6.0 | V | |
Standby Current | ISB | - | 1.0 | 2.0 | μA | Vcc = 5V, TA = 25°C |
Active Current | IAV | - | 10 | 20 | mA | Vcc = 5V, TA = 25°C |
Programming Current | IPGM | 10 | - | 25 | mA | Vcc = 5V, TA = 25°C |
Erase/Program Cycle Time | TPC | - | 4 | 8 | s | Vcc = 5V, TA = 25°C |
Data Retention | 10 | - | 100 | years | Vcc = 5V, TA = 25°C | |
Operating Temperature | TA | -40 | - | 85 | °C | |
Storage Temperature | TSTG | -65 | - | 150 | °C | |
Output High Voltage | VOH | 2.4 | - | Vcc-0.4 | V | IOL = -0.4mA, Vcc = 5V, TA = 25°C |
Output Low Voltage | VOL | - | 0.4 | 0.5 | V | IOH = 4.0mA, Vcc = 5V, TA = 25°C |
Input High Voltage | VIH | 2.0 | - | Vcc | V | IIH = 1.0μA, Vcc = 5V, TA = 25°C |
Input Low Voltage | VIL | 0 | - | 0.8 | V | IIL = 1.0μA, Vcc = 5V, TA = 25°C |
Access Time | tAC | 70 | - | 90 | ns | Vcc = 5V, TA = 25°C |
Address Setup Time | tAS | 20 | - | 30 | ns | Vcc = 5V, TA = 25°C |
Address Hold Time | tAH | 0 | - | 5 | ns | Vcc = 5V, TA = 25°C |
Output Enable Setup Time | tOE | 20 | - | 30 | ns | Vcc = 5V, TA = 25°C |
Output Enable Hold Time | tOH | 0 | - | 5 | ns | Vcc = 5V, TA = 25°C |
Write Enable Setup Time | tWE | 20 | - | 30 | ns | Vcc = 5V, TA = 25°C |
Write Enable Hold Time | tWH | 0 | - | 5 | ns | Vcc = 5V, TA = 25°C |
Instructions for Use:
Power Supply:
- Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 6.0V.
- The device has a low standby current, making it suitable for battery-powered applications.
Programming:
- The programming current (IPGM) should be between 10mA and 25mA.
- The typical time required for a complete erase/program cycle is 4 seconds, with a maximum of 8 seconds.
Temperature:
- The operating temperature range is from -40°C to 85°C.
- The storage temperature range is from -65°C to 150°C.
Timing Parameters:
- Ensure that all timing parameters such as access time (tAC), address setup time (tAS), and output enable setup time (tOE) are met to avoid data corruption or incorrect operation.
Data Retention:
- The device guarantees data retention for at least 10 years under normal operating conditions.
Handling:
- Handle the device with care to avoid static discharge, which can damage the chip.
- Follow proper soldering techniques to ensure reliable connections.
Testing:
- Before deploying the device in a final application, test it under various conditions to ensure it meets the required performance specifications.
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