Details

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BUY GS-D200S https://www.utsource.net/itm/p/12443319.html

Parameter	Specifications
Part Number	GS-D200S
Type	MOSFET
Package	TO-252 (DPAK)
Drain Source Voltage	200V
Continuous Drain Current	7A at TC = 25°C, 4.6A at TC = 100°C
RDS(on)	0.8Ω at VGS = 10V
Gate Charge	35nC
Input Capacitance	980pF
Total Power Dissipation	1.4W at TC = 25°C
Operating Temperature	-55°C to +150°C
Storage Temperature	-55°C to +150°C

Instructions for Use:

1. Handling Precautions: The GS-D200S is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting on a heatsink if operating near the maximum power dissipation limits to maintain junction temperature within safe operating limits.
3. Biasing: Apply gate voltage carefully. The device can be damaged by excessive gate-source voltage. Keep Vgs within specified limits.
4. Derating: For continuous operation above 25°C, derate the drain current as per the specifications provided.
5. Testing: When testing or evaluating the device, ensure that all voltages and currents do not exceed the absolute maximum ratings.
6. Storage: Store in original packaging in a dry environment to prevent damage.

(For reference only)