IRFR4615TRLPBF N-CHANNEL 150V 33A (TC) 144W (TC) SURFACE MOUNT D-PAK IRFP4615TR

IRFR4615TRLPBF N-CHANNEL 150V 33A (TC) 144W (TC) SURFACE MOUNT D-PAK IRFP4615TR

Category: Transistors

Specifications
SKU
12444946
Details

BUY IRFR4615TRLPBF N-CHANNEL 150V 33A (TC) 144W (TC) SURFACE MOUNT D-PAK IRFP4615TR https://www.utsource.net/itm/p/12444946.html

Below is the parameter table and instructions for the IRFR4615TRLPBF N-CHANNEL 150V 33A (TC) 144W (TC) SURFACE MOUNT D-PAK IRFP4615TR:

Parameter Table

Parameter Symbol Min Typ Max Unit Conditions
Drain-to-Source Voltage VDS - - 150 V
Gate-to-Source Voltage VGS -15 - 20 V
Continuous Drain Current ID - - 33 A TC = 25掳C
Pulsed Drain Current ID(p) - - 85 A tp = 10 ms, TC = 25掳C
Power Dissipation Ptot - - 144 W TC = 25掳C
Junction Temperature TJ - - 175 掳C
Storage Temperature Range TSTG -55 - 150 掳C
Thermal Resistance, Junction to Case R胃JC - - 1.0 掳C/W
Thermal Resistance, Junction to Ambient R胃JA - - 62.5 掳C/W No heatsink, still air
Input Capacitance Ciss - 1040 - pF VDS = 10 V, f = 1 MHz
Output Capacitance Coss - 44 - pF VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance Crss - 14 - pF VDS = 10 V, f = 1 MHz
Gate Charge QG - 110 - nC VGS = 10 V
Threshold Gate Voltage VGS(th) 1.5 2.5 4.0 V ID = 250 渭A
On-State Resistance RDS(on) - - 0.033 VGS = 10 V, ID = 33 A, TC = 25掳C

Instructions

  1. Handling and Storage:

    • Handle with care to avoid damage to the leads and body.
    • Store in a dry, cool place to prevent moisture and corrosion.
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
    • Use a thermal interface material (TIM) between the component and the heatsink to improve thermal conductivity.
  3. Soldering:

    • Preheat the PCB to reduce thermal shock.
    • Use a soldering iron with a temperature setting appropriate for surface mount components (typically 300-350掳C).
    • Avoid excessive soldering time to prevent damage to the component.
  4. Electrical Connections:

    • Connect the gate and source pins carefully to avoid short circuits.
    • Use a low-inductance layout to minimize parasitic inductance and improve switching performance.
  5. Testing:

    • Test the component under controlled conditions to ensure it meets the specified parameters.
    • Use a suitable power supply and load to test the drain current and power dissipation.
  6. Safety:

    • Always follow proper safety guidelines when handling high-voltage and high-power components.
    • Ensure that the circuit is properly insulated and grounded to prevent electrical hazards.

By following these instructions, you can ensure optimal performance and reliability of the IRFR4615TRLPBF N-CHANNEL MOSFET.

(For reference only)

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