Details

---

BUY IDT71024S15TY https://www.utsource.net/itm/p/12445129.html

Parameter	Description	Value
Part Number	Part number	IDT71024S15TY
Function	Function	24K x 18 Dual-Port RAM
Technology	Technology	CMOS
Supply Voltage (Vcc)	Operating supply voltage	5.0V ± 5%
Data Width	Data bus width	18 bits
Address Lines	Address lines	15 bits
Memory Size	Total memory size	24K x 18 bits
Ports	Number of ports	2
Access Time	Access time (typical)	15 ns
Power Consumption	Power consumption (active)	250 mW
Package Type	Package type	44-pin TQFP
Operating Temperature	Operating temperature range	-40°C to +85°C
Storage Temperature	Storage temperature range	-65°C to +150°C
Ordering Information	Ordering information	IDT71024S15TY-15

Instructions for Use

1. Power Supply:

   • Connect the Vcc pin to a stable 5.0V power supply with a tolerance of ±5%.
   • Connect the Vss pin to ground.

2. Address Lines:

   • Connect the address lines (A0-A14) to the desired address inputs for both ports.
   • Ensure that the address lines are properly debounced and stable before accessing the memory.

3. Data Lines:

   • Connect the data lines (D0-D17) to the data bus for both ports.
   • Ensure that the data lines are properly buffered if driving long or high-capacitance traces.

4. Control Signals:

   • Connect the control signals (CE, OE, WE) to the appropriate control logic.
   • CE (Chip Enable): Active low, enables the device.
   • OE (Output Enable): Active low, enables data output.
   • WE (Write Enable): Active low, enables data write.

5. Timing:

   • Ensure that all timing parameters, such as setup and hold times, are met for reliable operation.
   • Refer to the datasheet for detailed timing diagrams and specifications.

6. Temperature:

   • Operate the device within the specified temperature range (-40°C to +85°C) to ensure reliable performance.
   • Store the device within the storage temperature range (-65°C to +150°C).

7. Handling:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD).
   • Follow proper ESD handling procedures during assembly and testing.

8. Testing:

   • Perform initial testing under controlled conditions to verify correct operation.
   • Use test patterns to validate read and write functionality across the entire memory range.

9. Documentation:

   • Refer to the full datasheet for additional details, including electrical characteristics, mechanical dimensions, and application notes.

(For reference only)