BSM35GP120

BSM35GP120

Category: ModulesIGBT

Specifications
SKU
12447297
Details

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Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 1200 V IC = 0 A, Tj = 25°C
Emitter-Collector Voltage VEBO - - 1200 V IE = 0 A, Tj = 25°C
Gate-Emitter Voltage VGE -15 - 15 V IG = 0 A, Tj = 25°C
Continuous Collector Current IC - - 35 A Tj = 25°C
Pulse Collector Current IC pul - - 70 A tp = 10 ms, Tj = 25°C
Power Dissipation PT - - 250 W Tc = 25°C
Junction Temperature Tj op -55 - 175 °C -
Storage Temperature Range Tstg -55 - 150 °C -

Instructions for Use:

  1. Handling Precautions:

    • Handle the BSM35GP120 with care to avoid static discharge and mechanical damage.
    • Use proper ESD protection when handling the device.
  2. Mounting:

    • Ensure that the mounting surface is flat and clean to ensure good thermal contact.
    • Apply a suitable thermal compound between the device and the heatsink to enhance heat dissipation.
  3. Electrical Connections:

    • Connect the collector, emitter, and gate terminals correctly to avoid damage.
    • Use appropriate wire gauges to handle the current ratings.
  4. Thermal Management:

    • The device should be mounted on a heatsink to manage the power dissipation effectively.
    • Ensure adequate ventilation or forced cooling if operating at high power levels.
  5. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Operate within the recommended temperature range to ensure reliable performance.
  6. Testing:

    • Perform initial testing under controlled conditions to verify correct operation.
    • Use appropriate test equipment and follow safety guidelines.
  7. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Avoid exposure to corrosive environments.
  8. Disposal:

    • Follow local regulations for the disposal of electronic components.
    • Consider recycling options to minimize environmental impact.
(For reference only)

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