Details
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Parameter | Description | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VCC | Supply Voltage | 10.5 | - | 20 | V |
IOUT | Output Current | - | 3.5 | 4.5 | A |
fSW | Switching Frequency | 200 | - | 1000 | kHz |
VGS(th) | Gate-Source Threshold Voltage | 2.0 | 2.5 | 3.0 | V |
RDS(on) | On-State Resistance | - | 0.35 | 0.45 | Ω |
td(on) | Turn-On Delay Time | 30 | - | 50 | ns |
tr | Rise Time | 25 | - | 40 | ns |
td(off) | Turn-Off Delay Time | 35 | - | 55 | ns |
tf | Fall Time | 20 | - | 35 | ns |
VDS(max) | Drain-Source Breakdown Voltage | - | - | 600 | V |
TJ | Junction Temperature | -55 | - | 150 | °C |
TSTG | Storage Temperature Range | -55 | - | 150 | °C |
Instructions for Use:
Supply Voltage (VCC):
- Ensure the supply voltage is within the range of 10.5V to 20V to avoid damage or improper operation.
Output Current (IOUT):
- The device can handle output currents up to 4.5A. Do not exceed this limit to prevent overheating or failure.
Switching Frequency (fSW):
- Operate the device within the switching frequency range of 200kHz to 1000kHz to ensure optimal performance.
Gate-Source Threshold Voltage (VGS(th)):
- The device will start conducting when the gate-source voltage exceeds 2.0V. Ensure the control circuit provides a sufficient gate drive to turn the device on reliably.
On-State Resistance (RDS(on)):
- The on-state resistance is typically 0.35Ω at room temperature. This value can increase with temperature, so consider thermal management in high-power applications.
Timing Parameters:
- Ensure that the turn-on delay time (td(on)), rise time (tr), turn-off delay time (td(off)), and fall time (tf) are within the specified ranges to avoid timing issues in your circuit.
Drain-Source Breakdown Voltage (VDS(max)):
- The maximum drain-source voltage is 600V. Ensure that the device is not subjected to voltages exceeding this limit to prevent breakdown.
Temperature Considerations:
- The junction temperature (TJ) should be kept between -55°C and 150°C. Proper heat sinking may be required in high-power applications.
- The storage temperature range (TSTG) is also -55°C to 150°C. Store the device in a controlled environment to prevent damage.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage sensitive components.
- Follow proper soldering techniques to ensure reliable connections and avoid thermal shock.
Application Notes:
- Refer to the datasheet and application notes for specific circuit design recommendations and examples.
- For high-frequency applications, pay attention to parasitic inductances and capacitances to minimize noise and improve efficiency.
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