2SA1302,2SC3281

2SA1302,2SC3281

Category: Modules

Specifications
SKU
12468974
Details

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Below is the parameter table for the 2SA1302 (PNP) and 2SC3281 (NPN) transistors, along with some basic instructions for their use.

Parameter Table

Parameter 2SA1302 (PNP) 2SC3281 (NPN)
Collector-Emitter Voltage (VCE) 60 V 60 V
Emitter-Base Voltage (VEB) 5 V 5 V
Collector Current (IC) 15 A 15 A
Base Current (IB) 1.5 A 1.5 A
Power Dissipation (PT) 120 W 120 W
HFE (DC Current Gain) 20 - 100 20 - 100
Transition Frequency (fT) 1 MHz 1 MHz
Storage Temperature Range (TSTG) -55°C to +150°C -55°C to +150°C
Operating Temperature Range (TA) -55°C to +150°C -55°C to +150°C
Case Type TO-3 TO-3

Instructions for Use

General Usage:

  1. Polarity: Ensure that the polarity of the transistor is correct. For 2SA1302 (PNP), the collector should be more positive than the emitter. For 2SC3281 (NPN), the collector should be more negative than the emitter.
  2. Heat Dissipation: Both transistors can dissipate up to 120 W of power. Use appropriate heat sinks to manage heat dissipation, especially when operating at high power levels.
  3. Voltage and Current Ratings: Do not exceed the maximum ratings for collector-emitter voltage, base-emitter voltage, collector current, and base current. Exceeding these limits can cause damage to the transistor.
  4. Biasing: Proper biasing is crucial for stable operation. Use resistors to set the base current and ensure that the transistor operates within its safe operating area (SOA).
  5. Storage and Handling: Store the transistors in a dry, cool place. Handle them with care to avoid static discharge, which can damage the sensitive components.

Specific Considerations:

  • 2SA1302 (PNP):

    • Base-Emitter Voltage: The base-emitter voltage should not exceed 5 V.
    • Collector-Emitter Voltage: The maximum collector-emitter voltage is 60 V.
    • Current Gain: The DC current gain (HFE) ranges from 20 to 100, so use this range to calculate the base current needed for a given collector current.
  • 2SC3281 (NPN):

    • Base-Emitter Voltage: The base-emitter voltage should not exceed 5 V.
    • Collector-Emitter Voltage: The maximum collector-emitter voltage is 60 V.
    • Current Gain: The DC current gain (HFE) ranges from 20 to 100, so use this range to calculate the base current needed for a given collector current.

Example Circuit:

Here is a simple example circuit for each transistor:

2SA1302 (PNP) Example:

+Vcc (e.g., 12V) --- [R1] --- C (Collector)
                             |
                             [R2]
                             |
                             B (Base)
                             |
                             E (Emitter) --- GND
  • R1: Collector resistor to limit collector current.
  • R2: Base resistor to limit base current and provide biasing.

2SC3281 (NPN) Example:

+Vcc (e.g., 12V) --- [R1] --- B (Base)
                             |
                             [R2]
                             |
                             C (Collector)
                             |
                             E (Emitter) --- GND
  • R1: Base resistor to limit base current and provide biasing.
  • R2: Collector resistor to limit collector current.

By following these guidelines and using the parameter table, you can effectively design circuits using the 2SA1302 and 2SC3281 transistors.

(For reference only)

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