TC58NVG0S3ETAI0

TC58NVG0S3ETAI0


Specifications
SKU
12468982
Details

BUY TC58NVG0S3ETAI0 https://www.utsource.net/itm/p/12468982.html

Parameter Description Value
Device Name TC58NVG0S3ETAI0
Type NAND Flash Memory
Density Storage Capacity 128 Gb (16 GB)
Interface Interface Type Toggle Mode 2.0
I/O Voltage (VccQ) Operating Voltage for I/O Pins 1.8 V ± 0.1 V
Core Voltage (Vcc) Operating Voltage for Core 3.3 V ± 0.3 V
Data Transfer Rate Maximum Data Transfer Rate 400 MB/s (Read), 200 MB/s (Write)
Package Package Type BGA-169
Operating Temperature Industrial Temperature Range -40°C to +85°C
ECC Requirement Error Correction Code Up to 24-bit ECC per 1024 bytes
Block Size Block Size 2048 KB
Page Size Page Size 16 KB (Data) + 816 Bytes (Spare Area)
Program/Erase Cycles Endurance 3,000 Program/Erase Cycles
Retention Time Data Retention 10 years at 25°C
Standby Current Standby Current (Typical) 100 μA
Active Current Active Current (Typical) 150 mA (Read), 200 mA (Write)
Package Dimensions Package Size 16 mm x 12 mm x 1.2 mm

Instructions for Use:

  1. Power Supply:

    • Connect the core voltage (Vcc) to 3.3 V ± 0.3 V.
    • Connect the I/O voltage (VccQ) to 1.8 V ± 0.1 V.
  2. Initialization:

    • Ensure the device is powered up before applying any signals.
    • Follow the initialization sequence as specified in the datasheet to configure the device.
  3. Data Access:

    • Use the appropriate command set for read, write, and erase operations.
    • Ensure the ECC (Error Correction Code) is implemented in the system to correct any bit errors during data transfer.
  4. Temperature Considerations:

    • Operate the device within the industrial temperature range of -40°C to +85°C to ensure reliable performance.
    • Avoid exposing the device to temperatures outside this range for extended periods.
  5. Endurance and Retention:

    • The device supports up to 3,000 program/erase cycles.
    • Data retention is guaranteed for 10 years at 25°C.
  6. Handling:

    • Handle the device with care to avoid physical damage.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
  7. Testing:

    • Perform regular testing to ensure the device is functioning correctly.
    • Refer to the datasheet for specific test procedures and parameters.
  8. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Use proper anti-static packaging when storing or transporting the device.

For detailed information, refer to the official datasheet provided by the manufacturer.

(For reference only)

View more about TC58NVG0S3ETAI0 on main site