Details

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BUY MDP10N027 https://www.utsource.net/itm/p/12494031.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-State Resistance	RDS(on)	-	27	-	m惟 @ VGS=10V, ID=1A	On-state resistance from drain to source
Breakdown Voltage	BVdss	-	60	-	V	Drain-to-source breakdown voltage
Gate Threshold Voltage	VGS(th)	1.0	-	2.0	V	Gate threshold voltage
Continuous Drain Current	ID	-	10	-	A	Continuous drain current at Ta=25掳C
Power Dissipation	PD	-	180	-	mW	Maximum power dissipation at Ta=25掳C
Total Gate Charge	Qg	-	4.3	-	nC	Total gate charge

Instructions for Use:

1. Handling Precautions: The MDP10N027 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
2. Mounting: Ensure that the component is mounted on a suitable heatsink if operating at high currents or in environments where ambient temperatures exceed typical limits.
3. Operating Conditions: Operate within specified voltage and current limits to avoid damage. Refer to the maximum ratings section of the datasheet for absolute maximum ratings.
4. Gate Drive: Apply appropriate gate drive voltages to ensure reliable switching performance. Avoid exceeding the gate-source voltage rating.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

For detailed application notes and further instructions, refer to the full datasheet provided by the manufacturer.

(For reference only)