DS24B33+

DS24B33+

Category: IC Chips

Specifications
Details

BUY DS24B33+ https://www.utsource.net/itm/p/12496637.html

Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VDD Operating 2.8 - 5.5 V
Standby Current IDD VDD = 3V - 1 - μA
Active Current IDD VDD = 3V, Active - 200 - μA
Write Cycle Time tWC 4 - 6 ms
Read Cycle Time tRC 20 - 40 ms
Memory Size 1 - - Kbit
Data Retention Time 10 - - Years
Write Endurance 1 - - Million Cycles

Instructions for DS24B33+

  1. Power Supply:

    • Ensure the supply voltage (VDD) is within the operating range of 2.8V to 5.5V.
  2. Standby Mode:

    • In standby mode, the device consumes minimal current (IDD ≈ 1μA at VDD = 3V).
  3. Active Mode:

    • When active, the device can consume up to 200μA depending on operations.
  4. Writing Data:

    • A write cycle takes between 4ms and 6ms.
    • The device supports up to 1 million write cycles.
  5. Reading Data:

    • A read cycle takes between 20ms and 40ms.
    • The data retention time is guaranteed for 10 years.
  6. Memory Configuration:

    • The device features 1Kbit of non-volatile memory.
  7. Operating Environment:

    • Ensure that the device operates within its specified temperature and humidity ranges to avoid damage or reduced performance.
  8. Communication Protocol:

    • Use the 1-Wire protocol for communication with the device. Ensure proper timing and signal integrity for reliable operation.
  9. Handling Precautions:

    • Handle the device with care to prevent electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during handling and installation.
(For reference only)

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