Details

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BUY CM200DY-12NF https://www.utsource.net/itm/p/12501227.html

Parameter	Description
Part Number	CM200DY-12NF
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Polarity	N-Channel
VDS (Max Drain-Source Voltage)	650 V
RDS(on) (On-State Resistance)	0.18 Ω @ 10 V, 25°C
ID (Continuous Drain Current)	200 A @ 25°C, 149 A @ 100°C
PD (Power Dissipation)	300 W
Package Type	TO-247
Operating Temperature Range	-55°C to +175°C
Storage Temperature Range	-55°C to +150°C
Gate Charge (Qg)	150 nC @ VGS = 15 V
Input Capacitance (Ciss)	4770 pF @ VDS = 300 V, VGS = 0 V
Output Capacitance (Coss)	120 pF @ VDS = 300 V, VGS = 0 V
Reverse Transfer Capacitance (Crss)	110 pF @ VDS = 300 V, VGS = 0 V

Instructions for Use:

1. Mounting: Ensure proper heat sinking when mounting the device due to its high power dissipation capability.
2. Electrical Connections: Connect the drain, source, and gate terminals correctly as per the circuit diagram. Ensure that the gate is isolated from any conductive surfaces.
3. Thermal Management: Given the operating temperature range, ensure adequate cooling mechanisms are in place to prevent overheating.
4. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
5. Testing: Before installing into the final application, test the device under controlled conditions to ensure it meets the required specifications.
6. Storage: Store in a dry, cool place within the specified storage temperature range to avoid damage.

(For reference only)