FS225R12KE3_S1

FS225R12KE3_S1

Category: ModulesIGBT

Specifications
SKU
12508573
Details

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Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCE - - 1200 V Maximum voltage between collector and emitter
Collector Current IC - - 25 A Maximum current through the collector
Gate-Emitter Voltage VGE -15 - 15 V Maximum voltage between gate and emitter
Power Dissipation PTOT - - 250 W Maximum power dissipation
Junction Temperature TJ -55 - 175 °C Operating temperature range
Storage Temperature TSTG -55 - 150 °C Storage temperature range
Thermal Resistance Rth(j-c) - 0.8 - K/W Thermal resistance from junction to case

Instructions:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the thermal resistance.
    • Handle with care to avoid damage to the sensitive components.
  2. Electrical Connections:

    • Connect the collector (C) to the high-voltage side of the circuit.
    • Connect the emitter (E) to the low-voltage side or ground.
    • Apply the gate (G) voltage carefully within the specified range to control the device.
  3. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and power dissipation.
    • Ensure the junction temperature remains within the operating range to prevent overheating.
  4. Storage:

    • Store in a dry, cool place within the specified storage temperature range to maintain reliability.
  5. Testing:

    • Use appropriate test equipment to verify the device parameters before installation.
    • Perform tests at room temperature unless otherwise specified.
  6. Safety:

    • Follow all safety guidelines when working with high voltages and currents.
    • Use protective equipment as necessary to prevent injury.
(For reference only)

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