Details

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BUY TIP147 https://www.utsource.net/itm/p/12508747.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	100	V
Emitter-Base Voltage	VEB	-	-	6.5	V
Collector Current	IC	-	-	10	A
Power Dissipation	PT	-	-	65	W
Storage Temperature	TSTG	-40	-	150	掳C
Operating Temperature	TA	-40	-	125	掳C
Base-Emitter Saturation Voltage	VBE(sat)	1.3	1.8	2.5	V
Collector-Emitter Saturation Voltage	VCE(sat)	1.0	1.5	2.0	V
Transition Frequency	fT	-	2.5	-	MHz

Instructions for Using TIP147:

1. Mounting:

   • Ensure proper heat sinking to manage the high power dissipation capability.
   • Use a thermal compound between the transistor and the heat sink for efficient heat transfer.

2. Biasing:

   • The base-emitter voltage (V_BE(sat)) is relatively high, so ensure the base drive circuit can provide sufficient current.
   • For optimal performance, keep the base current (I_B) within safe limits to avoid overheating.

3. Operational Limits:

   • Do not exceed the maximum collector-emitter voltage (V_CE) of 100V.
   • The maximum collector current (I_C) should not exceed 10A.
   • Ensure the power dissipation (P_T) does not exceed 65W to prevent thermal damage.

4. Temperature Considerations:

   • The operating temperature range is from -40掳C to 125掳C. Ensure the ambient temperature is within these limits.
   • The storage temperature range is from -40掳C to 150掳C. Store the device in a controlled environment to avoid damage.

5. Handling:

   • Handle with care to avoid mechanical stress on the leads and body.
   • Use appropriate ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

6. Testing:

   • Before installing in a circuit, test the device using a multimeter or transistor tester to ensure it meets the specified parameters.
   • Perform in-circuit testing under controlled conditions to validate performance and reliability.

By following these guidelines, you can ensure the TIP147 operates safely and efficiently in your application.

(For reference only)