Details
BUY RS18N50F https://www.utsource.net/itm/p/12511187.html
| Parameter | Description | Value |
|---|---|---|
| Part Number | Component Identifier | RS18N50F |
| Type | Device Type | N-Channel MOSFET |
| VDS (V) | Drain-Source Voltage | 50V |
| RDS(on) (Ω) | On-State Resistance at VGS=10V | 18mΩ |
| ID (A) | Continuous Drain Current | 42A |
| PD (W) | Power Dissipation | 1.6W |
| Package | Housing Type | TO-220 |
| VGS(th) (V) | Gate Threshold Voltage | 2.1V to 4.0V |
| Qg (nC) | Total Gate Charge | 39nC |
| FBSOA | Forward Bias Safe Operating Area | Refer to Datasheet |
| Operating Temp | Junction Temperature Range | -55°C to 150°C |
Instructions for Use:
- Installation: Ensure the RS18N50F is mounted on a suitable heatsink if operating near maximum current or power ratings to prevent overheating.
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
- Gate Drive: For optimal performance, ensure the gate voltage does not exceed the maximum rating and use adequate drive strength to switch the MOSFET quickly.
- Thermal Management: Monitor the junction temperature to stay within the specified operating range. Use thermal management techniques like heatsinks or forced air cooling as necessary.
- Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
- Refer to Datasheet: Always consult the full datasheet for detailed specifications, especially for parameters like the forward bias safe operating area (FBSOA) which are critical for specific applications.
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