Details

---

BUY IRF7341 https://www.utsource.net/itm/p/12520632.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	60	-	V
Gate-Source Voltage	VGS	-15	-	12	V
Continuous Drain Current	ID	-	4.0	-	A
Pulse Drain Current	IDpeak	-	18	-	A
Power Dissipation	PD	-	19.6	-	W
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C
Total Gate Charge	QG	-	20	-	nC
Input Capacitance	Ciss	-	1010	-	pF
Output Capacitance	Coss	-	330	-	pF
RDS(on) at VGS=10V	RDS(on)	-	8.5	-	mΩ

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 60V.
   • The gate-source voltage (V_GS) should be kept between -15V and 12V to avoid damage.

2. Current Ratings:

   • The continuous drain current (I_D) should not exceed 4.0A.
   • For short pulses, the peak drain current (I_Dpeak) can go up to 18A.

3. Power Dissipation:

   • The power dissipation (P_D) should be managed to stay below 19.6W to prevent overheating.

4. Temperature Limits:

   • The junction temperature (T_J) must be maintained between -55°C and 150°C.
   • The storage temperature (T_STG) should be within the range of -65°C to 150°C.

5. Capacitance and Charge:

   • The input capacitance (C_iss) is typically around 1010pF.
   • The output capacitance (C_oss) is approximately 330pF.
   • The total gate charge (Q_G) is about 20nC.

6. On-State Resistance:

   • The on-state resistance (R_DS(on)) when V_GS is 10V is typically 8.5mΩ.

7. Handling Precautions:

   • Use appropriate ESD protection when handling the device.
   • Ensure proper heat sinking if operating near the maximum power dissipation.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

8. Mounting and Soldering:

   • Use a suitable soldering profile to avoid thermal shock.
   • Ensure good thermal and electrical connections for reliable operation.

(For reference only)