D1825
Category: Elec-component74 series Digital Integrated Circuits74 series Digital Integrated CircuitsIntegrated Circuit
Specifications
SKU
12524246
Details
BUY D1825 https://www.utsource.net/itm/p/12524246.html
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Forward Voltage | V_F | 1.7 | 2.0 | 2.3 | V |
| Reverse Breakdown Voltage | V_BR | - | 50 | - | V |
| Forward Current (Continuous) | I_F | - | 30 | - | mA |
| Forward Current (Pulse) | I_FM | - | 100 | - | mA |
| Reverse Current | I_R | - | 100 | - | nA |
| Operating Temperature | T_op | -40 | - | 85 | 掳C |
| Storage Temperature | T_stg | -65 | - | 150 | 掳C |
Instructions for Use:
Forward Voltage (V_F):
- Ensure that the forward voltage across the diode does not exceed 2.3V to avoid damage.
Reverse Breakdown Voltage (V_BR):
- The diode can withstand reverse voltages up to 50V. Exceeding this value may cause permanent damage.
Forward Current (I_F):
- Continuous forward current should not exceed 30mA. Higher currents can lead to overheating and failure.
Forward Current (Pulse) (I_FM):
- Pulse currents up to 100mA are permissible, provided they are short in duration and do not cause excessive heating.
Reverse Current (I_R):
- The reverse leakage current should be kept below 100nA to ensure optimal performance.
Operating Temperature (T_op):
- The diode is designed to operate within a temperature range of -40掳C to 85掳C. Operation outside this range may affect performance and reliability.
Storage Temperature (T_stg):
- Store the diode in a temperature range of -65掳C to 150掳C to prevent degradation.
Mounting:
- Ensure proper heat dissipation by mounting the diode on a suitable heatsink if operating at high currents or in high-temperature environments.
Handling:
- Handle the diode with care to avoid mechanical damage. Use appropriate ESD protection to prevent electrostatic discharge damage.
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