Details

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BUY NAND256W3A2BN6E https://www.utsource.net/itm/p/12526283.html

Parameter	Description
Part Number	NAND256W3A2BN6E
Type	NAND Flash Memory
Density	256 Mbit (32 MB)
Organization	8,192 Pages x 2,048 Bytes/Page + 64 Bytes/Spares
Vcc Supply Voltage	2.7 V to 3.6 V
I/O Voltage	2.7 V to 3.6 V
Operating Temperature	-40°C to +85°C
Package	TSOP-48
Access Time	70 ns
Page Program Time	Max 200 μs
Block Erase Time	Max 2 ms
Endurance	100,000 Program/Erase Cycles
Data Retention	10 Years
Features	Built-in ECC, Ready/Bsy Output, Power-On Reset

Instructions:

1. Power-Up Sequence: Ensure the Vcc supply voltage is stable before applying any signals.
2. Initialization: After power-up, wait for the device to initialize. The Ready/Busy pin will indicate when the device is ready.
3. Command Set: Use standard NAND flash commands for read, program, and erase operations. Refer to the datasheet for specific command codes.
4. Error Correction Code (ECC): Utilize the built-in ECC feature to manage data integrity during read and write operations.
5. Handling Spare Areas: Use the spare area in each page for ECC or other metadata as required.
6. Block Management: Avoid excessive wear by managing block usage effectively, considering the endurance limit.
7. Temperature Considerations: Operate within the specified temperature range to ensure reliable performance.
8. Signal Integrity: Maintain clean signal lines to prevent data corruption, especially important for I/O voltages.
9. Programming Tools: Use appropriate programming tools and software to interface with the NAND flash memory.

For detailed specifications and additional information, refer to the manufacturer’s datasheet.

(For reference only)