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Below is the parameter table and instructions for the BSM50GX120DN2, a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.

BSM50GX120DN2 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE(max)	-	-	1200	V	Tj = 25°C
Gate-Emitter Voltage	VGE(max)	-	-	±20	V
Continuous Collector Current	IC(max)	-	-	50	A	Tcase = 25°C, Tj = 150°C
Pulse Collector Current	IC(max, pulse)	-	-	200	A	tp = 10 μs, IC/IC(max) ≤ 2
Total Power Dissipation	PTOT(max)	-	-	400	W	Tcase = 25°C, Rth(j-c) = 0.6 K/W
Junction Temperature	Tj(op)	-100	-	150	°C
Storage Temperature	Tstg	-55	-	150	°C
Thermal Resistance, Junction to Case	Rth(j-c)	-	0.6	-	K/W
Turn-On Time	ton	-	1.2	1.8	μs	IC = 50 A, VGE = 15 V, VCE = 600 V
Turn-Off Time	toff	-	1.5	2.2	μs	IC = 50 A, VGE = -15 V, VCE = 600 V
Saturation Voltage	VCE(sat)	-	2.0	2.5	V	IC = 50 A, VGE = 15 V, Tj = 25°C
Gate Charge	QG	-	100	130	nC	IC = 50 A, VGE = 15 V, VCE = 600 V

Instructions for BSM50GX120DN2

1. Handling and Storage:

   • ESD Protection: The BSM50GX120DN2 is sensitive to electrostatic discharge (ESD). Use proper ESD protection equipment and follow ESD handling procedures.
   • Storage Conditions: Store the device in a dry, cool place within the temperature range of -55°C to 150°C.

2. Mounting:

   • Thermal Management: Ensure adequate heat sinking to maintain the junction temperature below 150°C. Use thermal paste or thermal interface materials between the device and the heat sink for optimal thermal performance.
   • Mechanical Stress: Avoid excessive mechanical stress on the device during mounting. Follow the recommended torque values for screw terminals.

3. Electrical Connections:

   • Gate Drive: Use a gate driver circuit that can provide the required gate-emitter voltage (V_GE) and current. Ensure the gate resistor is properly chosen to control the turn-on and turn-off times.
   • Snubber Circuits: Consider using snubber circuits to protect against voltage spikes and ringing in high-frequency applications.

4. Operating Conditions:

   • Continuous Operation: Ensure that the continuous collector current (I_C) does not exceed 50 A at the specified case temperature and junction temperature.
   • Pulse Operation: For pulse operation, do not exceed the pulse collector current (I_C(max, pulse)) of 200 A for a pulse duration of 10 μs.

5. Testing:

   • Initial Testing: Perform initial testing at low power levels to ensure proper operation before moving to full load conditions.
   • Regular Maintenance: Regularly inspect the device and heat sink for signs of wear or damage. Replace any damaged components immediately.

6. Safety Precautions:

   • High Voltage: The BSM50GX120DN2 operates at high voltages. Always follow safety guidelines and use appropriate protective equipment when working with high-voltage circuits.
   • Overcurrent Protection: Implement overcurrent protection to prevent damage to the device in case of short circuits or other faults.

By following these parameters and instructions, you can ensure reliable and efficient operation of the BSM50GX120DN2 in your application.

(For reference only)