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BUY 2ED300C17-ST https://www.utsource.net/itm/p/12529448.html

Below is the parameter table and instructions for the 2ED300C17-ST, a Silicon Carbide (SiC) MOSFET from Infineon Technologies.

2ED300C17-ST Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	VDSS	-	1700	-	V	ID = 0, Tj = 25°C
Continuous Drain Current	ID	-	300	-	A	VGS = 18V, VDS = 40V, TC = 25°C
Pulsed Drain Current	ID(p)	-	600	-	A	VGS = 18V, VDS = 40V, tp = 10μs, TC = 25°C
Gate-Source Voltage	VGS	-20	0	20	V	-
Gate-Threshold Voltage	VGS(th)	2.5	3.5	4.5	V	ID = 1mA, Tj = 25°C
On-State Resistance	RDS(on)	-	30	-	mΩ	VGS = 18V, ID = 300A, Tj = 25°C
Total Gate Charge	QG	-	110	-	nC	VDS = 800V, ID = 300A, Tj = 25°C
Input Capacitance	Ciss	-	1900	-	pF	VDS = 800V, f = 1MHz, Tj = 25°C
Output Capacitance	Coss	-	550	-	pF	VDS = 800V, f = 1MHz, Tj = 25°C
Reverse Transfer Capacitance	Crss	-	250	-	pF	VDS = 800V, f = 1MHz, Tj = 25°C
Thermal Resistance (Junction to Case)	Rth(j-c)	-	0.1	-	K/W	-
Thermal Resistance (Junction to Ambient)	Rth(j-a)	-	1.5	-	K/W	-
Maximum Junction Temperature	Tj(max)	-	-	175	°C	-
Storage Temperature Range	Tstg	-55	-	175	°C	-

Instructions for Use

1. Handling and Storage:

   • Handle the device with care to avoid mechanical damage.
   • Store the device in a dry, cool environment to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions to avoid damaging the device.

2. Mounting:

   • Ensure proper thermal management by using a heatsink or heat spreader.
   • Apply thermal paste between the device and the heatsink for optimal heat dissipation.
   • Tighten the mounting screws to the recommended torque specifications to ensure good thermal contact.

3. Biasing and Operation:

   • Apply the gate-source voltage (V_GS) within the specified range (-20V to +20V).
   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating of 1700V.
   • Operate the device within the safe operating area (SOA) to avoid thermal runaway and device failure.

4. Gate Drive:

   • Use a gate driver with sufficient current capability to charge and discharge the gate capacitance quickly.
   • Ensure that the gate drive voltage is at least 18V to fully turn on the MOSFET and minimize on-state resistance.
   • Avoid exceeding the gate threshold voltage (V_GS(th)) to prevent accidental turn-on.

5. Overcurrent Protection:

   • Implement overcurrent protection to limit the drain current (I_D) to the continuous rating of 300A.
   • Use a fast-acting fuse or current-limiting circuit to protect against short circuits and other fault conditions.

6. Thermal Management:

   • Monitor the junction temperature (T_j) to ensure it does not exceed 175°C.
   • Use thermal sensors or temperature monitoring circuits to provide feedback for thermal management.

7. Testing and Verification:

   • Perform initial testing at low power levels to verify correct operation and thermal performance.
   • Gradually increase the power level while monitoring temperature and electrical parameters to ensure safe operation.

By following these guidelines, you can ensure reliable and efficient operation of the 2ED300C17-ST SiC MOSFET in your application.

(For reference only)