Details
BUY IRFW644B https://www.utsource.net/itm/p/12532067.html
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | - | 20 | - | A | TC = 25°C |
| Pulse Drain Current | Ipp | - | 130 | - | A | t = 10 ms, duty cycle = 1% |
| Continuous Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Drain-Source Breakdown Voltage | VDSS | 55 | - | - | V | - |
| Gate-Source Leakage Current | IGSS | - | ±100 | - | nA | VGS = ±20V, TC = 25°C |
| Drain-Source On-State Resistance | RDS(on) | 45 | - | 70 | mΩ | VGS = 10V, ID = 20A, TC = 25°C |
| Gate Charge | QG | - | 80 | - | nC | VGS = 10V, VDS = 25V |
| Total Switching Energy | ETS | - | 4.2 | - | μJ | VDS = 45V, ID = 20A, f = 100kHz |
| Junction Temperature | Tj | -55 | - | 175 | °C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | - |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical stress.
- Ensure proper heat sinking if operating at high currents or in high ambient temperatures.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short, low-inductance leads to minimize parasitic inductance.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 10V to ensure full turn-on and minimum RDS(on).
- Use a gate resistor to control the rise and fall times of the gate signal, reducing switching losses and electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature (Tj) to ensure it does not exceed 175°C.
- Use a heatsink or thermal pad to dissipate heat effectively, especially under continuous high current conditions.
Pulse Operation:
- For pulse operation, ensure that the pulse width and duty cycle do not exceed the specified limits to avoid overheating.
Storage:
- Store the device in a dry, cool place within the storage temperature range (-55°C to 150°C).
ESD Protection:
- Handle the device with ESD protection measures to prevent damage from static electricity.
Testing:
- Test the device under controlled conditions to verify its performance and reliability before integrating it into a circuit.
Compliance:
- Ensure that the device is used in compliance with all relevant safety and regulatory standards.
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