Details

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BUY MT48LC2M32B2P-6 https://www.utsource.net/itm/p/12532347.html

Parameter	Description	Value
Device Type	Memory Device	2M x 32-bit SDRAM
Package	Package Type	54-pin TSOP (Thin Small Outline Package)
Supply Voltage (Vcc)	Operating Voltage Range	2.5V ± 0.25V
Supply Voltage (Vccq)	I/O Supply Voltage	2.5V ± 0.25V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Access Time (tAC)	Access Time	6 ns (max)
Cycle Time (tRC)	Row Cycle Time	60 ns (max)
Row Precharge Time (tRP)	Row Precharge Time	15 ns (max)
Row Active to Row Active (tRRD)	Row Active to Row Active Delay	15 ns (max)
Write Recovery Time (tWR)	Write Recovery Time	15 ns (max)
Column Address Strobe Latency (CL)	CAS Latency	2 clocks (fixed)
Refresh Rate	Refresh Rate	8K refresh cycles per 64 ms
Data Width	Data Bus Width	32 bits
Bank Architecture	Number of Banks	4 banks
Row Address Bits	Row Address Bits	11 bits
Column Address Bits	Column Address Bits	10 bits
Power Consumption	Active Power Consumption	2.0W (typical)
Standby Power Consumption	Standby Power Consumption	0.5W (typical)

Instructions for Use:

1. Power Supply:

   • Connect Vcc and Vccq to a stable 2.5V power supply.
   • Ensure proper decoupling capacitors are placed close to the power pins to minimize noise.

2. Address and Control Signals:

   • Apply row and column addresses during read and write operations.
   • Use control signals such as RAS#, CAS#, WE#, and CS# to manage memory access.

3. Timing Considerations:

   • Respect the specified timing parameters to avoid data corruption and ensure reliable operation.
   • Pay particular attention to tAC, tRC, tRP, tRRD, and tWR to maintain proper memory function.

4. Refresh:

   • Implement a refresh cycle every 64 ms to prevent data loss.
   • Each refresh cycle should cover all rows in one of the four banks.

5. Initialization:

   • After power-up, perform a mode register set (MRS) command to initialize the device.
   • Set the CAS latency to 2 clocks as required by the device.

6. Data Input/Output:

   • During write operations, ensure that the data is valid before the rising edge of the clock.
   • During read operations, data will be available on the data bus after the specified access time.

7. Power Management:

   • To reduce power consumption, use the self-refresh mode when the system is idle.
   • Enter standby mode by deasserting the chip select (CS#) signal.

8. Handling:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Follow proper ESD precautions during assembly and testing.

(For reference only)