2SC828

2SC828


Specifications
SKU
12532443
Details

BUY 2SC828 https://www.utsource.net/itm/p/12532443.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 40 V
Collector-Base Voltage VCB - - 40 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - 150 300 mA Continuous, TA = 25°C
Collector Dissipation PC - - 625 mW TC = 25°C
DC Current Gain hFE 40 120 400 - IC = 150mA, VCE = 10V
Transition Frequency fT - 250 - MHz
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SC828 with care to avoid static damage.
    • Use proper anti-static equipment and techniques when handling the transistor.
  2. Mounting:

    • Ensure that the transistor is securely mounted to prevent mechanical stress.
    • Use a heat sink if the power dissipation exceeds the safe operating range.
  3. Biasing:

    • Properly bias the transistor to ensure it operates within its safe operating area (SOA).
    • Refer to the typical operating conditions for biasing recommendations.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Monitor the temperature to ensure it remains within the specified storage and operating ranges.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2SC828.
    • Test the transistor under controlled conditions to avoid damage.
  6. Storage:

    • Store the 2SC828 in a dry, cool place away from direct sunlight.
    • Keep the transistors in their original packaging until ready for use to protect against static discharge.
  7. Soldering:

    • Use a soldering iron with a temperature setting appropriate for the transistor.
    • Avoid overheating during soldering to prevent damage to the device.

By following these instructions, you can ensure the reliable operation and longevity of the 2SC828 transistor.

(For reference only)

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