IRAMS10UP60A-2

IRAMS10UP60A-2


Specifications
Details

BUY IRAMS10UP60A-2 https://www.utsource.net/itm/p/12532582.html

Parameter Symbol Min Typ Max Unit Description
Continuous Drain Current ID - 10 - A @ TA = 25°C, TC = 75°C
Pulse Drain Current Ipp - 80 - A @ Tp = 10 μs, Duty = 1%
Forward Voltage VF - 0.9 - V @ IF = 1 A
Reverse Recovery Time trr - 65 - ns @ IF = 10 A, IR = 0.1 A
Junction Capacitance Ciss - 120 - pF @ VDS = 30 V, f = 1 MHz
Gate Charge Qg - 14 - nC @ VGS = 10 V, VDS = 30 V
Power Dissipation PD - - 120 W @ TC = 25°C
Operating Junction Temp. TJ -55 - 150 °C Operating temperature range
Storage Temperature Tstg -55 - 150 °C Storage temperature range

Instructions for Use:

  1. Mounting and Handling: Ensure proper handling to avoid damage to the device. Mount the component with adequate cooling if operating near maximum power dissipation.
  2. Electrical Connections: Connect the drain and source leads carefully to ensure low inductance paths. Use short and wide traces or wires.
  3. Thermal Management: For high current applications, use a heatsink or thermal pad to dissipate heat effectively.
  4. Pulse Operation: When using in pulse mode, ensure the duty cycle does not exceed specified limits to prevent overheating.
  5. Storage Conditions: Store in a dry place within the specified storage temperature range to prevent damage.
  6. Safety Precautions: Handle with care to avoid electrostatic discharge (ESD) which can damage the semiconductor junctions.
(For reference only)

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