Details

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BUY STMICROELECTRONICS STP26NM60N https://www.utsource.net/itm/p/12532609.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	-	600	V
Gate-Source Voltage	VGS	-15	-	15	V
Continuous Drain Current	ID	-	-	26	A	Tc = 25°C
Power Dissipation	PD	-	-	270	W	Tc = 25°C
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	Tstg	-55	-	150	°C
Total Gate Charge	Qg	-	89	-	nC	VGS = 15V, IDS = 26A
Input Capacitance	Ciss	-	3400	-	pF	VDS = 300V, VGS = 0V
Output Capacitance	Coss	-	950	-	pF	VDS = 300V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	310	-	pF	VDS = 300V, VGS = 0V

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is mounted on a suitable heatsink to manage the power dissipation effectively.
   • Handle with care to avoid damage to the leads or body of the component.

2. Electrical Connections:

   • Connect the gate (G), drain (D), and source (S) terminals as per your circuit design.
   • Ensure proper insulation between the gate and other parts of the circuit to prevent leakage currents.

3. Operating Conditions:

   • Operate within the specified voltage and current limits to ensure reliable performance.
   • Keep the junction temperature within the operational range to avoid thermal runaway.

4. Testing and Verification:

   • Before final assembly, test the device under controlled conditions to verify its performance parameters.
   • Use appropriate protective equipment when testing high-voltage circuits.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Avoid exposure to corrosive environments to maintain terminal integrity.

For detailed application notes and more specific guidelines, refer to the datasheet provided by STMicroelectronics.

(For reference only)