Details

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BUY ON SEMICON/ON FGL40N120ANDTU https://www.utsource.net/itm/p/12532622.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions/Notes
Drain-Source Voltage	VDSS	-	-	1200	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-15	-	15	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	40	-	A	At Tc = 25°C, VDSS = 800V
Power Dissipation	PD	-	-	360	W	At Tc = 25°C
Junction Temperature	TJ	-55	-	175	°C	Operating temperature range
Storage Temperature	TSTG	-55	-	175	°C	Storage temperature range
Total Gate Charge	Qg	-	96	-	nC	At VGS = 15V, IDS = 20A

Instructions for Use:

1. Handling Precautions:

   • The FGL40N120ANDTU is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.

2. Mounting and PCB Design:

   • Ensure adequate heat sinking for continuous operation at high currents to maintain the junction temperature within specified limits.
   • Use wide traces on the PCB to minimize inductance and resistance.

3. Gate Drive Requirements:

   • Provide sufficient gate drive voltage (typically ±15V) to ensure full enhancement or depletion of the MOSFET.
   • Ensure fast switching transitions by minimizing gate resistance.

4. Overcurrent Protection:

   • Implement overcurrent protection circuits to prevent damage from excessive current conditions.

5. Storage and Operation:

   • Store the device in a dry environment and operate within the specified temperature ranges to ensure reliability and longevity.

6. Application Notes:

   • Refer to ON Semiconductor application notes for detailed guidelines on using this MOSFET in specific applications such as motor control, power supplies, and converters.

(For reference only)