Details

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BUY TIP35C https://www.utsource.net/itm/p/12532640.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	100	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	15	-	A
Base Current	IB	-	2.5	-	A
Power Dissipation	PT	-	65	-	W
Junction Temperature	TJ	-	150	-	°C
Storage Temperature	TSTG	-65	-	150	°C
Thermal Resistance, Junction to Case	RthJC	-	1.4	-	°C/W

Instructions for Using TIP35C:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
   • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.

2. Biasing:

   • The base current (I_B) should be sufficient to ensure the transistor operates in the active region or saturation as required.
   • Avoid excessive base current to prevent damage to the transistor.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (V_CE) of 100V.
   • Ensure the collector current (I_C) does not exceed 15A.
   • Keep the power dissipation (P_T) below 65W to avoid overheating.

4. Temperature Management:

   • The junction temperature (T_J) should not exceed 150°C.
   • Store the device within the storage temperature range of -65°C to 150°C.

5. Handling:

   • Handle the transistor with care to avoid mechanical stress.
   • Use appropriate ESD protection to prevent damage from static electricity.

6. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • Verify the thermal resistance (R_thJC) to ensure effective heat dissipation.

By following these instructions, you can ensure reliable and efficient operation of the TIP35C transistor.

(For reference only)