Details

---

BUY HY27US08561M-TPCB https://www.utsource.net/itm/p/12532741.html

Parameter	Description
Device Type	NAND Flash Memory
Memory Density	8 Gb (1 GB)
Package Type	Thin Small Outline Package with Leadframe (TSOP)
Number of Pins	48
Operating Voltage (Vcc)	2.7 V to 3.6 V
Page Size	2,048 Bytes + 64 Bytes Spare Area
Block Size	64 Pages
Die Organization	1,024 Blocks per Die
Data Bus Width	8-bit
Programming Time	Up to 500 μs per Page
Erase Time	Up to 2 ms per Block
Endurance	100,000 Program/Erase Cycles
Retention Time	10 Years
Operating Temperature	-40°C to +85°C
Standby Current	10 μA (Typical)
Active Current	40 mA (Typical)

Instructions for Use:

1. Power Supply Requirements: Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
2. Initialization: After power-up, perform an initialization sequence as per the datasheet guidelines.
3. Addressing and Data Transfer: Follow the command set and timing diagrams provided in the datasheet for proper addressing and data transfer operations.
4. Error Handling: Implement error handling mechanisms to manage bad blocks and ECC (Error Correction Code) for reliable data storage.
5. Programming and Erasing: Adhere to the programming and erasing times to avoid data corruption. Do not exceed the maximum endurance cycles.
6. Temperature Considerations: Operate within the specified temperature range to ensure optimal performance and longevity.
7. Handling Precautions: Handle the device with care to prevent electrostatic discharge (ESD) damage.

(For reference only)