Details

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BUY MT48LC16M16A2P-6AIT:G https://www.utsource.net/itm/p/12532821.html

Parameter	Description	Value
Device Type	Memory Device	16M x 16 SDRAM
Package	Package Type	54-ball FBGA
Speed Grade	Access Time	6 ns
Supply Voltage (Vcc)	Core Supply Voltage	2.5V ± 0.1V
Supply Voltage (Vccq)	I/O Supply Voltage	2.5V ± 0.1V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Data Width	Data Bus Width	16 bits
Bank Organization	Number of Banks	4
Row Address Bits	Number of Row Address Bits	13
Column Address Bits	Number of Column Address Bits	9
Refresh Rate	Refresh Cycle Time	7.8 us (64ms / 8192)
Cycle Time (tRC)	Row Cycle Time	60 ns
Write Recovery Time	Write Recovery Time	15 ns
CAS Latency	CAS Latency	CL=3
Burst Length	Burst Length Options	1, 2, 4, 8
Power Consumption	Active Power Consumption	1.0W
Standby Power	Standby Power Consumption	0.03W

Instructions for Use:

1. Power Supply Configuration: Ensure Vcc and Vccq are set to 2.5V ± 0.1V.
2. Initialization: After power-up, perform a reset command followed by a mode register set command to initialize the device properly.
3. Addressing: The MT48LC16M16A2P-6AIT:G uses a 13-bit row address and a 9-bit column address. Configure the bank addresses as required.
4. Refresh Management: Implement a refresh cycle every 64ms to maintain data integrity.
5. Timing Parameters: Adhere strictly to the timing parameters provided in the table to ensure reliable operation.
6. Data Handling: Utilize burst lengths effectively based on your application needs; configure CAS latency accordingly.
7. Thermal Considerations: Monitor operating temperature within the industrial range (-40°C to +85°C) for optimal performance.
8. Signal Integrity: Maintain clean signal paths for control and data lines to prevent errors.

For detailed specifications and advanced configurations, refer to the datasheet provided by Micron Technology.

(For reference only)