Details

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BUY AT27C4096-90JU https://www.utsource.net/itm/p/12533292.html

Parameter	Description
Device Type	512K x 8-bit CMOS Flash Memory
Package Type	40-Pin Plastic DIP
Operating Voltage (Vcc)	2.7V to 3.6V for Vcc = 3.3V operation, 4.5V to 5.5V for Vcc = 5V operation
Access Time	90 ns
Organization	512K x 8 (64K x 8)
Technology	CMOS
Endurance	100,000 Program/Erase Cycles
Data Retention	20 years
Operating Temperature	-40°C to +85°C
Standby Current	1 μA (typical)
Active Current	20 mA (typical)
Write Time	5 ms (typical)

Instructions

1. Power Supply Connection:

   • Connect Vcc to the appropriate supply voltage (either 3.3V or 5V based on your application).
   • Ensure that Vss is connected to ground.

2. Address and Data Lines:

   • Connect the address lines (A0-A15) to the desired memory locations.
   • Connect the data lines (D0-D7) to the system data bus.

3. Control Signals:

   • Chip Enable (CE#): Active low. When low, the device is enabled.
   • Output Enable (OE#): Active low. Enables data outputs when reading.
   • Write Enable (WE#): Active low. Used during write operations.

4. Programming:

   • Use the standard programming algorithm for UV-EPROMs. Refer to the specific programming instructions provided by the manufacturer for detailed steps.

5. Erase Operation:

   • The device supports byte-level erase operations. For bulk erase, refer to the datasheet for timing and sequence requirements.

6. Handling Precautions:

   • Handle with care to avoid damage from static electricity.
   • Follow proper soldering techniques to ensure reliable connections.

For more detailed information, including timing diagrams and advanced features, refer to the official AT27C4096-90JU datasheet provided by the manufacturer.

(For reference only)