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BUY SPW21N50C3 https://www.utsource.net/itm/p/12533320.html

Below is the parameter table and instructions for the SPW21N50C3, which is a N-Channel Power MOSFET.

SPW21N50C3 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	VDSS	-	-	500	V	TJ = 25°C
Gate-Source Voltage	VGSS	-10	-	10	V	TJ = 25°C
Continuous Drain Current	ID	-	21	-	A	TC = 25°C
Continuous Drain Current (Pulsed)	IDM	-	42	-	A	TC = 25°C, tp = 10 μs, IGT = 10 mA
Gate Charge	QG	-	60	-	nC	VGS = 10 V, ID = 21 A
Input Capacitance	Ciss	-	1850	-	pF	VDS = 300 V, f = 1 MHz
Output Capacitance	Coss	-	110	-	pF	VDS = 300 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	95	-	pF	VDS = 300 V, f = 1 MHz
On-State Resistance	RDS(on)	-	1.8	-	Ω	VGS = 10 V, ID = 21 A, TJ = 25°C
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 μA, TJ = 25°C
Total Power Dissipation	PTOT	-	-	180	W	TC = 25°C
Junction to Ambient Thermal Resistance	RθJA	-	-	62	°C/W	-
Junction to Case Thermal Resistance	RθJC	-	-	0.6	°C/W	-

Instructions for SPW21N50C3

1. Handling and Storage:

   • ESD Protection: The SPW21N50C3 is sensitive to electrostatic discharge (ESD). Always use proper ESD protection measures when handling the device.
   • Storage Conditions: Store the device in a dry, cool place with controlled humidity to prevent moisture damage.

2. Mounting and Assembly:

   • Heat Sinking: Ensure adequate heat sinking to maintain the junction temperature within safe limits. The maximum junction temperature (T_J(max)) is 175°C.
   • Soldering: Use a soldering iron with a temperature not exceeding 300°C. The soldering time should not exceed 10 seconds per connection. Allow the device to cool down before making additional connections.

3. Biasing and Operation:

   • Gate-Source Voltage (V_GS): Apply a gate-source voltage between -10 V and +10 V. The typical operating range for V_GS is +10 V for full turn-on.
   • Drain-Source Voltage (V_DS): Ensure that the drain-source voltage does not exceed 500 V to avoid breakdown.
   • Drain Current (I_D): The continuous drain current should not exceed 21 A at 25°C case temperature. For pulsed operation, the peak current can be up to 42 A for short durations (t_p = 10 μs).

4. Testing and Troubleshooting:

   • Testing: Use a multimeter or a dedicated MOSFET tester to check the continuity and resistance between the terminals. The gate-to-source resistance should be high when the device is off.
   • Troubleshooting: If the device fails, check for overvoltage, overcurrent, or excessive temperature conditions. Ensure that the heat sink is properly attached and that the gate drive circuitry is functioning correctly.

5. Safety Precautions:

   • Overvoltage Protection: Implement overvoltage protection circuits to prevent damage from transient voltages.
   • Overcurrent Protection: Use current limiting or fuse protection to prevent excessive current flow.
   • Thermal Management: Monitor the junction temperature to ensure it remains within safe limits. Use thermal sensors if necessary.

By following these parameters and instructions, you can ensure reliable and efficient operation of the SPW21N50C3 N-Channel Power MOSFET.

(For reference only)