Details

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BUY AM29F400BB https://www.utsource.net/itm/p/12533343.html

Parameter	Description	Min	Typ	Max	Unit
VCC	Supply Voltage	2.7	-	3.6	V
VPP	Programming Voltage	2.7	-	3.6	V
ICC (Active)	Active Current	-	15	25	mA
ICC (Standby)	Standby Current	-	0.1	1	μA
tAA	Access Time	70	-	-	ns
tCH	Chip Enable High to Output Valid	25	-	-	ns
tCL	Chip Enable Low to Output High-Z	25	-	-	ns
tWP	Write Protect Pin to Output Valid	25	-	-	ns
tCE#	Chip Enable Pulse Width	100	-	-	ns
tOE#	Output Enable Pulse Width	100	-	-	ns
tWE#	Write Enable Pulse Width	100	-	-	ns
tPROG	Program Cycle Time	200	-	-	μs
tERASE	Erase Cycle Time	5	-	-	s
tPD	Power Down Time	0	-	-	ns
tRST	Reset Time	0	-	-	ns
Operating Temperature	-	-40	-	85	°C
Storage Temperature	-	-65	-	150	°C

Instructions for AM29F400BB

1. Power Supply:

   • Connect V_CC to the supply voltage (2.7V to 3.6V).
   • Connect V_PP to the programming voltage (2.7V to 3.6V).

2. Chip Enable (CE#):

   • Set CE# low to enable the device.
   • Set CE# high to put the device in standby mode.

3. Output Enable (OE#):

   • Set OE# low to enable data output.
   • Set OE# high to disable data output (high-impedance state).

4. Write Enable (WE#):

   • Set WE# low to initiate a write operation.
   • Set WE# high to complete the write operation.

5. Write Protect (WP#):

   • Set WP# high to allow write operations.
   • Set WP# low to protect the device from accidental writes.

6. Address Lines (A0-A17):

   • Apply the desired address to select the memory location.

7. Data Lines (D0-D7):

   • For read operations, the data will be available on these lines when CE# and OE# are low.
   • For write operations, apply the data to these lines when WE# is low.

8. Programming:

   • Ensure V_PP is set to the correct programming voltage.
   • Apply the address and data, then pulse WE# low to program the selected memory location.
   • Wait for the program cycle time (t_PROG) before accessing the memory again.

9. Erasing:

   • Set the chip to the erase mode by applying the appropriate sequence of signals.
   • Wait for the erase cycle time (t_ERASE) before accessing the memory again.

10. Power Down:

    • To enter power-down mode, set CE# high.
    • The device will consume minimal current in this mode.

11. Reset:

    • To reset the device, set CE# high for at least t_RST time.

12. Temperature Considerations:

    • Ensure the operating temperature is within -40°C to 85°C.
    • Store the device within -65°C to 150°C to avoid damage.

13. Handling:

    • Handle the device with care to avoid static discharge.
    • Use proper ESD protection during handling and installation.

(For reference only)