Details

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BUY PV563BA https://www.utsource.net/itm/p/12534353.html

Parameter	Description	Value	Unit
Part Number	Product identifier	PV563BA	-
Type	Device type	Photodiode	-
Material	Semiconductor material	Silicon	-
Spectral Response	Wavelength range of sensitivity	400 to 1100	nm
Peak Sensitivity	Wavelength of peak sensitivity	850	nm
Reverse Voltage	Maximum reverse voltage	15	V
Dark Current	Current in darkness at specified temperature	10	nA
Capacitance	Junction capacitance at zero bias	2.5	pF
Operating Temp Range	Temperature range for operation	-40 to +85	°C
Package	Encapsulation type	TO-46	-

Instructions for Use:

1. Handling Precautions: Handle the PV563BA with care to avoid damaging the sensitive photodiode surface. Use appropriate ESD (Electrostatic Discharge) protection measures.
2. Mounting: Ensure proper alignment and secure mounting when installing the device to prevent mechanical stress on the leads.
3. Biasing: Apply reverse bias voltage within the specified limits to ensure optimal performance and longevity.
4. Environmental Conditions: Operate the device within the specified temperature range to maintain performance characteristics.
5. Testing: During testing, ensure that the light source is within the spectral response range of the device for accurate readings.
6. Storage: Store in a dry, cool place away from direct sunlight to prevent degradation of performance over time.

(For reference only)