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BUY FGH60N60SFD FGH60N60 60N60 TO-247 https://www.utsource.net/itm/p/12534760.html

Below is the parameter table and instructions for the FGH60N60SFD (FGH60N60) 60N60 TO-247 N-Channel MOSFET.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain-Source Voltage	VDS	-	-	600	V	-
Gate-Source Voltage	VGS	-15	-	20	V	-
Continuous Drain Current	ID	-	60	-	A	TC = 25掳C
Continuous Drain Current	ID	-	38	-	A	TC = 100掳C
Pulse Drain Current	ID(p)	-	120	-	A	tp = 10 ms, TC = 25掳C
Total Power Dissipation	PTOT	-	-	190	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Gate Charge	QG	-	110	-	nC	VGS = 10V, ID = 10A
Input Capacitance	Ciss	-	3800	-	pF	VDS = 300V, f = 1 MHz
Output Capacitance	Coss	-	240	-	pF	VDS = 300V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	100	-	pF	VDS = 300V, f = 1 MHz
On-State Resistance	RDS(on)	-	0.18	-	惟	VGS = 10V, ID = 20A, TJ = 25掳C
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 渭A, TA = 25掳C
Maximum Gate-Source Voltage	VGS(max)	-15	-	20	V	-

Instructions

1. Handling and Storage:

   • Handle the device with care to avoid damage to the leads and the body.
   • Store the device in a dry, cool place away from direct sunlight and corrosive substances.
   • Ensure that the storage temperature range is between -55掳C and 150掳C.

2. Mounting:

   • Use a heat sink to manage the thermal dissipation effectively, especially when operating at high currents or power levels.
   • Ensure proper mechanical alignment and secure mounting to prevent mechanical stress on the device.
   • Apply thermal compound between the device and the heat sink to enhance thermal conductivity.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly to the circuit.
   • Use short and thick wires to minimize parasitic inductance and resistance.
   • Ensure that the gate drive voltage is within the specified range (-15V to +20V).

4. Operation:

   • Operate the device within the specified temperature range to avoid thermal runaway and ensure reliable performance.
   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Use appropriate gate drive circuits to switch the MOSFET efficiently and avoid excessive switching losses.

5. Testing:

   • Test the device under controlled conditions to verify its performance parameters.
   • Use a suitable test setup to measure parameters such as on-state resistance, threshold voltage, and gate charge.

By following these instructions, you can ensure the optimal performance and longevity of the FGH60N60SFD MOSFET.

(For reference only)