Details

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BUY 2SD2560-Y https://www.utsource.net/itm/p/12534987.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	600	V	IC = 0A, Tc = 25°C
Emitter-Base Voltage	V EBO	-	-	7	V	IE = 0A, Tc = 25°C
Collector Current	IC	-	-	15	A	Tc = 25°C
Continuous Collector Current	I CM	-	-	8	A	Tc = 25°C
Power Dissipation	Ptot	-	-	125	W	Tc = 25°C
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation especially when operating at high currents.
   • Handle with care to avoid damage to the pins or the body of the transistor.

2. Biasing and Operation:

   • Operate within specified voltage and current limits to prevent damage.
   • For optimal performance, keep the junction temperature within the specified range.

3. Storage:

   • Store in a dry place within the specified storage temperature range to avoid degradation.

4. Testing:

   • When testing, ensure that all parameters are within the maximum ratings to avoid damaging the device.
   • Use appropriate test equipment to measure parameters accurately.

5. Soldering:

   • Follow recommended soldering profiles to avoid thermal shock which can damage the device.
   • Allow sufficient cooling time post-soldering before operation.

(For reference only)