Details

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BUY FSDM0365RNB https://www.utsource.net/itm/p/12535071.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)DSS	ID = 250 μA, TC = 25°C	-	1200	-	V
Forward Voltage	VF	IF = 8 A, TC = 25°C	-	2.0	-	V
On-State Resistance	RDS(ON)	VGS = 15 V, ID = 8 A, TC = 25°C	-	36	-	mΩ
Gate Charge	QG	VGS = 15 V, VDS = 500 V, ID = 8 A	-	140	-	nC
Input Capacitance	Ciss	VGS = 0 V, f = 1 MHz	-	2400	-	pF
Output Capacitance	Coss	VDS = 500 V, f = 1 MHz	-	170	-	pF
Reverse Transfer Capacitance	Crss	VDS = 500 V, VGS = 0 V, f = 1 MHz	-	180	-	pF
Total Power Dissipation	PD	TC = 25°C	-	-	250	W
Junction Temperature	TJ	-	-	-	175	°C
Storage Temperature Range	TSTG	-	-65	-	175	°C

Instructions for Use:

1. Handling and Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid static discharge which can damage the device.

2. Mounting:

   • Ensure proper thermal management by using appropriate heat sinks or cooling solutions.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the junction temperature (TJ) remains within the specified range to avoid thermal runaway.

4. Driving the Gate:

   • Use a gate driver with sufficient drive strength to charge and discharge the gate capacitance quickly.
   • Ensure the gate voltage (VGS) is within the recommended range to avoid over-stressing the device.

5. Testing:

   • Use the test conditions provided in the table for accurate parameter measurements.
   • Perform regular testing to ensure the device is operating within specifications.

6. Safety:

   • Always follow safety guidelines when handling high-voltage and high-power components.
   • Use protective equipment such as gloves and safety glasses when necessary.

(For reference only)