1N4007=IN4007

1N4007=IN4007

Category: Transistors

Specifications
Details

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Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum Average Forward Rectified Current (IF(AV)) 1 A
Maximum RMS Reverse Current (IRMS) 5 μA
Junction Operating Temperature Range (TJ) -55 to +175 °C
Storage Temperature Range (TSTG) -65 to +150 °C
Forward Voltage (VF) at IF=1A 1.1 V

Instructions for Use:

  1. Polarity Awareness: Ensure correct polarity when installing the diode; the cathode (banded end) must be connected to the more positive side of the circuit.
  2. Heat Dissipation: Given its maximum average forward current rating, ensure adequate heat dissipation if operating near the limit.
  3. Voltage Rating: The 1N4007 is rated for a maximum repetitive peak reverse voltage of 1000V. Do not exceed this voltage to avoid damage.
  4. Temperature Considerations: Operate within the specified junction and storage temperature ranges to prevent thermal damage or degradation.
  5. Mounting: Secure the diode properly in your circuit board or assembly to avoid mechanical stress which can lead to failure.
  6. Surge Current Handling: While the diode has a high surge current capability, repeated exposure to high surge currents can reduce lifespan.
(For reference only)

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