Details

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BUY NAND512W3A2CN6E https://www.utsource.net/itm/p/12535103.html

Parameter	Description	Value
Device Name	NAND Flash Memory	NAND512W3A2CN6E
Memory Density	Total memory capacity	512 Mb (64 M x 8)
Organization	Data bus width	8-bit
Page Size	Page size for read/write operations	2048 Bytes + 64 Bytes
Block Size	Block size for erase operations	128 KBytes
Number of Blocks	Total number of blocks	4096
Supply Voltage	Operating voltage range	2.7 V to 3.6 V
Operating Temp.	Operating temperature range	-40°C to +85°C
Package Type	Package style	WSON-8
Access Time	Typical access time	70 ns
ECC Requirement	Error Correction Code requirement	1 bit/512 bytes
Endurance	Program/Erase cycles	100,000 cycles
Data Retention	Data retention time	10 years

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified range of 2.7 V to 3.6 V.
2. Temperature Considerations: Operate the device within the temperature range of -40°C to +85°C to avoid damage or malfunction.
3. Initialization: Before performing any read/write operations, initialize the device using the reset command.
4. Read Operations: To read data, send the appropriate command sequence followed by the address and then read the data from the I/O lines.
5. Write Operations: For write operations, ensure that the block is not write-protected and use the program page command to write data.
6. Erase Operations: Erase operations are performed on a block-by-block basis using the erase command.
7. Error Handling: Implement an ECC algorithm capable of correcting at least 1 bit error per 512 bytes of data.
8. Endurance Monitoring: Monitor the number of program/erase cycles to ensure they do not exceed 100,000 cycles to prevent wear-out.
9. Data Retention: Verify data integrity periodically if the device is used in applications requiring long-term data storage.

For detailed command sequences and timing diagrams, refer to the datasheet provided by the manufacturer.

(For reference only)