Details

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BUY IRFR9120N https://www.utsource.net/itm/p/12535130.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	0.12	-	Ω	VGS = 10V, ID = 8A
Gate Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Input Capacitance	Ciss	-	360	-	pF	VDS = 15V, VGS = 0V
Output Capacitance	Coss	-	20	-	pF	VDS = 15V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	140	-	pF	VDS = 15V, VGS = 0V
Maximum Drain Current	ID	-	-	9.0	A	TC = 25°C
Maximum Gate-Source Voltage	VGS	-20	-	20	V
Maximum Drain-Source Voltage	VDSS	-	-	60	V
Total Power Dissipation	PD	-	-	170	mW	TC = 25°C
Junction Temperature	TJ	-55	-	150	°C

Instructions for Use:

1. Handling Precautions: The IRFR9120N is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection equipment.
2. Mounting: Ensure that the device is mounted in a way that allows for adequate heat dissipation, especially when operating at higher currents or power levels.
3. Biasing: Proper biasing of the gate relative to the source is critical. Ensure that the gate voltage does not exceed the maximum rated gate-source voltage (VGS).
4. Operating Conditions: Do not exceed the maximum ratings specified in the table. Pay particular attention to the drain current (ID), gate-source voltage (VGS), and junction temperature (TJ).
5. Capacitance Considerations: When designing circuits, account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) as these can affect switching performance.
6. Testing: During testing and evaluation, ensure that all parameters are within the typical operating conditions to avoid damage to the device.

For detailed application notes and more comprehensive information, refer to the official datasheet provided by the manufacturer.

(For reference only)